Mathematics

Findings from Federal University advance knowledge in physics

  2008 SEP 15 - (VerticalNews.com) -- According to a study from Recife, Brazil, "The magnetization reversal process in single Permalloy (Ni81Fe19) nanowires has been investigated by magnetoresistance measurements as a function of the angle between the applied field and the wire direction. The Permalloy nanostructures fabricated on an ultrathin film by atomic force microscopy consist of two large rectangular pads connected by a nanowire with the shape of a long thin narrow tape."

  "For each field direction in the plane of the film the dependence of the magnetoresistance on the field value exhibits two main contributions: one from the pads and one from the nanowire. The contribution from the pads is due to a usual anisotropic magnetoresistance characteristic of coherent magnetization rotation, whereas the contribution from the nanowire is an abrupt transition at the switching field," wrote A.B. Oliveira and colleagues, Federal University.

  The researchers concluded: "The dependence of the switching field on the in-plane field angle is quantitatively described by a model of nucleation field with the buckling magnetization rotation mode."

  Oliveira and colleagues published their study in Physical Review B (Magnetization reversal in permalloy ferromagnetic nanowires investigated with magnetoresistance measurements. Physical Review B, 2008;78(2):4423).

  For more information, contact A.B. Oliveira, Federal University of Pernambuco, Dept. of Fis, BR-50670901 Recife, PE, Brazil.

  Publisher contact information for the journal Physical Review B is: American Physical Society, One Physics Ellipse, College Pk, MD 20740-3844, USA.

  Keywords: Emerging Technologies, Magnetoresistance, Nanostructural, Nanostructure, Nanostructures, Nanotech, Nanotechnology, Nanowire, Physics, Federal University.

  This article was prepared by VerticalNews Mathematics editors from staff and other reports. Copyright 2008, VerticalNews Mathematics via VerticalNews.com.